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cy7c1345g 4-mbit (128 k 36) flow-through sync sram cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 38-05517 rev. *l revised june 25, 2013 4-mbit (128 k 36) flow through sync sram features 128 k 36 common i/o 3.3 v core power supply (v dd ) 2.5 v or 3.3 v i/o supply (v ddq ) fast clock-to-output times ? 8.0 ns (100 mhz version) provide high performance 2-1-1-1 access rate user selectable burst counter supporting intel pentium interleaved or linear burst sequences separate processor and controller address strobes synchronous self timed write asynchronous output enable available in pb-free 100-pin tqfp package zz sleep mode option functional description the cy7c1345g is a 128 k 36 synchronous cache ram designed to interface with high speed microprocessors with minimum glue logic. the maximu m access delay from clock rise is 8.0 ns (100 mhz version). a 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. all synchronous inputs are gated by registers controlled by a positive edge triggered clock input (clk). the synchronous inputs include all addresses, all data inputs, address pipelining chip enable (ce 1 ), depth expansion chip enables (ce 2 and ce 3 ), burst control inputs (adsc , adsp , and adv ), write enables ( bw x , and bwe ), and global write (gw ). asynchronous inputs include the output enable (oe ) and the zz pin. the cy7c1345g enables either interleaved or linear burst sequences, selected by the mode input pin. a high selects an interleaved burst sequence, while a low selects a linear burst sequence. burst accesses are initiated with the processor address strobe (adsp ) or the cache controller address strobe (adsc ) inputs. addresses and chip enables are registered at rising edge of clock when either address strobe processor (adsp ) or address strobe controller ( adsc ) is active. subsequent burst addresses are internally generated as cont rolled by the advance pin (adv ). the cy7c1345g operates from a +3.3 v core power supply while all outputs operate with either a +2.5 or +3.3 v supply. all inputs and outputs are jedec standard jesd8-5 compatible. selection guide description 100 mhz unit maximum access time 8.0 ns maximum operating current 205 ma maximum standby current 40 ma errata: for information on silicon errata, see "errata" on page 21. details include trigger conditions, devices affected, and proposed workaround.
cy7c1345g document number: 38-05517 rev. *l page 2 of 24 address register burst counter and logic clr q1 q0 enable register sense amps output buffers input registers memory array mode a [1:0] zz dq s dqp a dqp b dqp c dqp d a 0, a1, a adv clk adsp adsc bw d bw c bw b bw a bwe ce1 ce2 ce3 oe gw sleep control dq a , dqp a byte write register dq b , dqp b byte write register dq c , dqp c byte write register byte write register dq d , dqp d byte write register dq d , dqp d byte write register dq c , dqp c byte write register dq b , dqp b byte write register dq a , dqp a byte write register logic block diagram
cy7c1345g document number: 38-05517 rev. *l page 3 of 24 contents pin configurations ........................................................... 4 pin definitions .................................................................. 5 functional overview ........................................................ 6 single read accesses ................................................ 6 single write accesse s initiated by adsp ................... 6 single write accesses initiate d by adsc ................... 6 burst sequences ......................................................... 7 sleep mode ................................................................. 7 interleaved burst address tabl e ................................. 7 linear burst address table ......................................... 7 zz mode electrical characteri stics .............................. 7 truth table ........................................................................ 8 truth table for read or write .......................................... 9 maximum ratings ........................................................... 10 operating range ............................................................. 10 neutron soft error immunity ......................................... 10 electrical characteristics ............................................... 10 capacitance .................................................................... 11 thermal resistance ........................................................ 11 ac test loads and waveforms ..................................... 12 switching characteristics .............................................. 13 timing diagrams ............................................................ 14 ordering information ...................................................... 18 ordering code definitions ..... .................................... 18 package diagrams .......................................................... 19 acronyms ........................................................................ 20 document conventions ................................................. 20 units of measure ....................................................... 20 errata ............................................................................... 21 part numbers affected .............................................. 21 product status ........................................................... 21 ram9 sync/nobl zz pin issues errata summary .... 21 document history page ................................................. 22 sales, solutions, and legal information ...................... 24 worldwide sales and design s upport ......... .............. 24 products .................................................................... 24 psoc? solutions ...................................................... 24 cypress developer community ................................. 24 technical support ................. .................................... 24
cy7c1345g document number: 38-05517 rev. *l page 4 of 24 pin configurations figure 1. 100-pin tqfp (14 20 1.4 mm) pinout [1] a a a a a 1 a 0 nc/72m nc/36m v ss v dd nc/9m a a a a a a dqp b dq b v ddq v ssq dq b dq b dq b dq b v ssq v ddq dq b dq b v ss nc v dd dq a dq a v ddq v ssq dq a dq a dq a dq a v ssq v ddq dq a dq a dqp a dqp c dq c dq c v ddq v ssq dq c dq c dq c dq c v ssq v ddq dq c dq c nc v dd nc v ss dq d dq d v ddq v ssq dq d dq d dq d dq d v ssq v ddq dq d dq d dqp d a a ce 1 ce 2 bw d bw c bw b bw a ce 3 v dd v ss clk gw bwe oe adsp a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 byte a byte c a adv adsc zz mode nc/18m byte b dq b byte d cy7c1345g note 1. errata: the zz pin (pin 64) needs to be externally connected to ground. for more information, see "errata" on page 21.
cy7c1345g document number: 38-05517 rev. *l page 5 of 24 pin definitions name i/o description a 0 , a 1 , a input synchronous address inputs used to select one of the 128 k address locations . sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1 , ce 2 , and ce 3 are sampled active. a [1:0] feed the two bit counter. bw a, bw b , bw c , bw d input synchronous byte write select inputs, active low . qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. gw input synchronous global write enable input, active low . when asserted low on the rising edge of clk, a global write is conducted (all bytes are written, regardless of the values on bw [a:d] and bwe ). bwe input synchronous byte write enable input, active low . sampled on the rising edge of clk. this signal is asserted low to conduct a byte write. clk input clock clock input . used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst operation. ce 1 input synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select or dese lect the device. adsp is ignored if ce 1 is high. ce 1 is sampled only when a new external address is loaded. ce 2 input synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select or dese lect the device. ce 2 is sampled only when a new external address is loaded. ce 3 input synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select or dese lect the device. ce 3 is sampled only when a new external address is loaded. oe input asynchronous output enable, asynchronous input, active low . controls the direction of the io pins. when low, the io pins act as outputs. when deasserted high, io pins are tristated and ac t as input data pins. oe is masked during the first clo ck of a read cycle when emerging from a deselected state. adv input synchronous advance input signal, sampled on the rising edge of clk. when asserted, it automatically increments the address in a burst cycle. adsp input synchronous address strobe from processor, sampled on the rising edge of clk, active low . when asserted low, addresses presented to the device ar e captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. adsc input synchronous address strobe from controller, sampled on the rising edge of clk, active low . when asserted low, addresses presented to the device ar e captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. zz [2] input asynchronous zz sleep input, active high . when asserted high places the device in a non-time critical sleep condition with data integrity preserved. during normal operation, this pin is low or left floating. zz pin has an internal pull-down. dqs, dqp a , dqp b , dqp c , dqp d io synchronous bidirectional data io lines . as inputs, they feed into an on-chip da ta register that is triggered by the rising edge of clk. as outputs, t hey deliver the data contained in t he memory location specified by the addresses presented during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins act as outputs. when high, dqs and dqp [a:d] are placed in a tristate condition. v dd power supply power supply inputs to the core of the device . v ss ground ground for the core of the device . v ddq io power supply power supply for the io circuitry . v ssq io ground ground for the io circuitry . note 2. errata: the zz pin (pin 64) needs to be externally connected to ground. for more information, see "errata" on page 21.
cy7c1345g document number: 38-05517 rev. *l page 6 of 24 functional overview all synchronous inputs pass through input registers controlled by the rising edge of the clock. maximum access delay from the clock rise (t co ) is 8.0 ns (100 mhz device). the cy7c1345g supports secon dary cache in systems using either a linear or interleaved burst sequence. the interleaved burst order supports pentium and i486? processors. the linear burst sequence is suited for proc essors that use a linear burst sequence. the burst order is user selectable and is determined by sampling the mode input. a ccesses are initiated with either the processor address strobe (adsp ) or the controller address strobe (adsc ). address advancement through the burst sequence is controlled by the adv input. a two bit on-chip wrap around burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. byte write operations are qualified with the byte write enable (bwe ) and byte write select (bw [a:d] ) inputs. a global write enable (gw ) overrides all byte write inputs and writes data to all four bytes. all writes are simp lified with on-chi p synchronous self timed write circuitry. three synchronous chip selects (ce 1 , ce 2 , and ce 3 ) and an asynchronous output enable (oe ) provide for easy bank selection and output tristate control. adsp is ignored if ce 1 is high. single read accesses a single read access is initiated when the following conditions are satisfied at clock rise: 1. ce 1 , ce 2 , and ce 3 are all asserted active. 2. adsp or adsc is asserted low (if the access is initiated by adsc , the write inputs are deasse rted during this first cycle). the address presented to the address inputs is latched into the address register and the burst counter or control logic and presented to the memory core. if the oe input is asserted low, the requested data is availabl e at the data outputs a maximum to t cdv after clock rise. adsp is ignored if ce 1 is high. single write accesses initiated by adsp single write access is initiated when the following conditions are satisfied at clock rise: 1. ce 1 , ce 2 , and ce 3 are all asserted active 2. adsp is asserted low. the addresses presented are loaded into the address register and the burst inputs (gw , bwe , and bw x ) are ignored during this first clock cycle. if the write in puts are asserted active (see "truth table for read or write" on page 9 for appropriate states that indicate a write) on the next clock rise, the appropriate data is latched and written into the devic e. byte writes are allowed. during byte writes, bw a controls dq a and bw b controls dq b , bw c controls dq c , and bw d controls dq d . all ios are tristated during a byte write. since this is a common io device, the asynchronous oe input signal is deasserted and the ios are tristated prior to the presentation of data to dq s . as a safety precaution, the data lines are tristated after a write cycle is detected, regardless of the state of oe . single write accesses initiated by adsc this write access is initiated when the following conditions are satisfied at clock rise: 1. ce 1 , ce 2 , and ce 3 are all asserted active. 2. adsc is asserted low. 3. adsp is deasserted high 4. the write input signals (gw , bwe , and bw x ) indicate a write access. adsc is ignored if adsp is active low. the addresses presented are loaded into the address register and the burst counter or control logic and delivered to the memory core. the information presented to dq [d:a] is written into the specified address location. byte writes are allowed. during byte writes, bw a controls dq a , bw b controls dq b , bw c controls dq c , and bw d controls dq d . all ios and even a byte write are tristated when a write is detected. since this is a common io device, the asynchronous oe input signal is deasserted and the ios are trista ted prior to the presentation of data to dqs. as a safety precaution, the data lines are tristated after a write cycle is detected, regardless of the state of oe . mode input static selects burst order . when tied to gnd selects linear burst sequence. when tied to v dd or left floating selects interleaved burst sequence. this is a strap pin and must remain static during device operation. mode pin has an internal pull up. nc ? no connects . not internally connected to the die. nc/9m, nc/18m, nc/36m, nc/72m, nc/144m, nc/288m, nc/576m, nc/1g ? no connects . not internally connected to the die. nc/9m, nc/18m, nc/3 6m, nc/72m, nc/144m, nc/288m, nc/576m, and nc/1g are addr ess expansion pins and are not internally connected to the die. pin definitions (continued) name i/o description
cy7c1345g document number: 38-05517 rev. *l page 7 of 24 burst sequences the cy7c1345g provides an on-chip two bit wrap around burst counter inside the sram. the burst counter is fed by a [1:0] and follows either a linear or interleaved burst order. the burst order is determined by the state of the mode input. a low on mode selects a linear burst sequence. a high on mode selects an interleaved burst order. leaving mode unconnected causes the device to default to a interleaved burst sequence. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conserva tion sleep mode. two clock cycles are required to enter into or exit from this sleep mode. in this mode, data integrity is guaranteed. accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed. the device is deselected prior to entering the sleep mode. ce s, adsp , and adsc must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst address table (mode = floating or v dd ) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min max unit i ddzz sleep mode standby current zz > v dd ? ? 0.2 v ? 40 ma t zzs device operation to zz zz > v dd ? 0.2 v ? 2t cyc ns t zzrec zz recovery time zz < 0.2 v 2t cyc ?ns t zzi zz active to sleep current th is parameter is sampled ? 2t cyc ns t rzzi zz inactive to exit sleep current this parameter is sampled 0 ? ns
cy7c1345g document number: 38-05517 rev. *l page 8 of 24 truth table the truth table for part cy7c1345g is as follows. [3, 4, 5, 6, 7] cycle description address used ce 1 ce 2 ce 3 zz adsp adsc adv write oe clk dq deselected cycle, power-down none h x x l x l x x x l?h tri-state deselected cycle, power-down none l l x l l x x x x l?h tri-state deselected cycle, power-down none l x h l l x x x x l?h tri-state deselected cycle, power-down none l l x l h l x x x l?h tri-state deselected cycle, power-down none x x x l h l x x x l?h tri-state sleep mode, power-down none x x x h x x x x x x tri-state read cycle, begin burst external l h l l l x x x l l?h q read cycle, begin burst external l h l l l x x x h l?h tri-state write cycle, begin burst external l h l l h l x l x l?h d read cycle, begin burst external l h l l h l x h l l?h q read cycle, begin burst external l h l l h l x h h l?h tri-state read cycle, continue burst next x x x l h h l h l l?h q read cycle, continue burst next x x x l h h l h h l?h tri-state read cycle, continue burst next h x x l x h l h l l?h q read cycle, continue burst next h x x l x h l h h l?h tri-state write cycle, continue burst next x x x l h h l l x l?h d write cycle, continue burst next h x x l x h l l x l?h d read cycle, suspend burst current x x x l h h h h l l?h q read cycle, suspend burst current x x x l h h h h h l?h tri-state read cycle, suspend burst current h x x l x h h h l l?h q read cycle, suspend burst current h x x l x h h h h l?h tri-state write cycle, suspend burst current x x x l h h h l x l?h d write cycle, suspend burst current h x x l x h h l x l?h d notes 3. x = ?don?t care,? h = logic high, and l = logic low. 4. write = l when any one or more byte write enable signals (bw a , bw b , bw c , bw d ) and bwe = l or gw = l. write = h when all byte write enable signals (bw a , bw b , bw c , bw d ), bwe , gw = h. 5. the dq pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 6. the sram always initiates a read cycle when adsp is asserted, regardless of the state of gw , bwe , or bw [a: d] . writes may occur only on subsequent clocks after the adsp or with the assertion of adsc . as a result, oe is driven high prior to the start of the write cycle to enable the outputs to tristate. oe is a ?do not care? for the remainder of the write cycle. 7. oe is asynchronous and is not sampled with t he clock rise. it is masked internally during write cycles. during a read cycle all d ata bits are tristate when oe is inactive or when the device is deselected, and all data bits behave as output when oe is active (low).
cy7c1345g document number: 38-05517 rev. *l page 9 of 24 truth table for read or write the truth table for read or write for part cy7c1345g is as follows. [8, 9] function gw bwe bw d bw c bw b bw a read h h x x x x read hlhhhh write byte (a, dqp a )hlhhhl write byte (b, dqp b )hlhhlh write bytes (b, a, dqp a , dqp b )hlhhll write byte (c, dqp c )hlhlhh write bytes (c, a, dqp c , dqp a )hlhlhl write bytes (c, b, dqp c , dqp b )hlhllh write bytes (c, b, a, dqp c , dqp b , dqp a )hlhlll write byte (d, dqp d )hllhhh write bytes (d, a, dqp d , dqp a )hllhhl write bytes (d, b, dqp d , dqp a )hllhlh write bytes (d, b, a, dqp d , dqp b , dqp a )hllhll write bytes (d, b, dqp d , dqp b ) hlllhh write bytes (d, b, a, dqp d , dqp c , dqp a ) hlllhl write bytes (d, c, a, dqp d , dqp b , dqp a ) hllllh write all bytes hlllll write all bytes l x x x x x note 8. x = ?don?t care,? h = logic high, and l = logic low. 9. this table is only a partial listing of the byte write combinations. any combination of bw x is valid. appropriate write is done based on the active byte write.
cy7c1345g document number: 38-05517 rev. *l page 10 of 24 maximum ratings exceeding the maximum ratings may shorten the battery life of the device. these user guidelines are not tested. storage temperature .. ............... ............... ?65 c to +150 c ambient temperature with power applied ............ ............... ............... ?55 c to +125 c supply voltage on v dd relative to gnd .......?0.5 v to +4.6 v supply voltage on v ddq relative to gnd ...... ?0.5 v to +v dd dc voltage applied to outputs in tristate ...........................................?0.5 v to v ddq + 0.5 v dc input voltage .............. .............. ..... ?0.5 v to v dd + 0.5 v current into outputs (low) ........................................ 20 ma static discharge voltage (mil-std-883, method 3015) ..... .............. .............. > 2001 v latch up current ..................................................... > 200 ma operating range range ambient temperature v dd v ddq commercial 0 c to +70 c 3.3 v ??? 5% / + 10% 2.5 v ?5% to v dd industrial ?40 c to +85 c neutron soft error immunity parameter description test conditions typ max* unit lsbu logical single bit upsets 25 c 361 394 fit/ mb lmbu logical multi bit upsets 25 c 0 0.01 fit/ mb sel single event latch up 85 c 0 0.1 fit/ dev * no lmbu or sel events occurred during testing ; this column represents a statistical ? 2 , 95% confidence limit calculat ion. for more details refer to application note an54908 ?accelerated neutron ser testing and calculation of terrestrial failure rates? electrical characteristics over the operating range parameter [10, 11] description test conditions min max unit v dd power supply voltage 3.135 3.6 v v ddq io supply voltage 2.375 v dd v v oh output high voltage for 3.3 v io, i oh = ?4.0 ma 2.4 ? v for 2.5 v io, i oh = ?1.0 ma 2.0 ? v v ol output low voltage for 3.3 v, io, i ol = 8.0 ma ? 0.4 v for 2.5 v io, i ol = 1.0 ma ? 0.4 v v ih input high voltage for 3.3 v io 2.0 v dd + 0.3 v v for 2.5 v io 1.7 v dd + 0.3 v v v il input low voltage [10] for 3.3 v io ?0.3 0.8 v for 2.5 v io ?0.3 0.7 v i x input leakage current except zz and mode gnd ? v i ? v ddq ? 55a input current of mode input = v ss ?30 ? a input = v dd ?5a input current of zz input = v ss ?5 ? a input = v dd ?30a i oz output leakage current gnd ? v i ? v ddq , output disabled ?5 5 a i dd v dd operating supply current v dd = max, i out = 0 ma, f = f max = 1/t cyc 10 ns cycle, 100 mhz ?205ma notes 10. overshoot: v ih(ac) < v dd + 1.5 v (pulse width less than t cyc /2), undershoot: v il(ac) > ?2 v (pulse width less than t cyc /2). 11. t power up : assumes a linear ramp from 0 v to v dd(min) within 200 ms. during this time v ih < v dd and v ddq < v dd.
cy7c1345g document number: 38-05517 rev. *l page 11 of 24 i sb1 automatic ce power-down current ? ttl inputs max v dd , device deselected, v in ? v ih or v in ? v il , f = f max , inputs switching 10 ns cycle, 100 mhz ?80ma i sb2 automatic ce power-down current ? cmos inputs max v dd , device deselected, v in ? v dd ? 0.3 v or v in ? 0.3 v, f = 0, inputs static 10 ns cycle, 100 mhz ?40ma i sb3 automatic ce power-down current ? cmos inputs max v dd , device deselected, v in ? v ddq ? 0.3 v or v in ? 0.3 v, f = f max , inputs switching 10 ns cycle, 100 mhz ?65ma i sb4 automatic ce power-down current ? ttl inputs max v dd , device deselected, v in ? v dd ? 0.3 v or v in ? 0.3 v, f = 0, inputs static 10 ns cycle, 100 mhz ?45ma capacitance parameter [12] description test conditions 100-pin tqfp max unit c in input capacitance t a = 25 ? c, f = 1 mhz, v dd = 3.3 v, v ddq = 3.3 v 5pf c clk clock input capacitance 5pf c io input or output capacitance 5 pf thermal resistance parameter [12] description test conditions 100-pin tqfp package unit ? ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, per eia/jesd51. 30.32 c/w ? jc thermal resistance (junction to case) 6.85 c/w electrical characteristics (continued) over the operating range parameter [10, 11] description test conditions min max unit note 12. tested initially and after any design or proc ess change that may affect these parameters.
cy7c1345g document number: 38-05517 rev. *l page 12 of 24 ac test loads and waveforms figure 2. ac test loads and waveforms output r = 317 ? r = 351 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.5 v 3.3 v all input pulses v ddq gnd 90% 10% 90% 10% ? 1ns ? 1ns (c) output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v t = 1.25 v 2.5 v all input pulses v ddq gnd 90% 10% 90% 10% ? 1 ns ? 1 ns (c) 3.3 v i/o test load 2.5 v i/o test load
cy7c1345g document number: 38-05517 rev. *l page 13 of 24 switching characteristics over the operating range parameter [13, 14] description -100 unit min max t power v dd (typical) to the first access [15] 1?ms clock t cyc clock cycle time 10 ? ns t ch clock high 4.0 ? ns t cl clock low 4.0 ? ns output times t cdv data output valid after clk rise ? 8.0 ns t doh data output hold after clk rise 2.0 ? ns t clz clock to low z [16, 17, 18] 0?ns t chz clock to high z [16, 17, 18] ?3.5ns t oev oe low to output valid ? 3.5 ns t oelz oe low to output low z [16, 17, 18] 0?ns t oehz oe high to output high z [16, 17, 18] ?3.5ns setup times t as address setup before clk rise 2.0 ? ns t ads adsp , adsc setup before clk rise 2.0 ? ns t advs adv setup before clk rise 2.0 ? ns t wes gw , bwe , bw x setup before clk rise 2.0 ? ns t ds data input setup before clk rise 2.0 ? ns t ces chip enable setup 2.0 ? ns hold times t ah address hold after clk rise 0.5 ? ns t adh adsp , adsc hold after clk rise 0.5 ? ns t weh gw , bwe , bw x hold after clk rise 0.5 ? ns t advh adv hold after clk rise 0.5 ? ns t dh data input hold after clk rise 0.5 ? ns t ceh chip enable hold after clk rise 0.5 ? ns notes 13. timing reference level is 1.5 v when v ddq = 3.3 v and is 1.25 v when v ddq = 2.5 v. 14. test conditions shown in (a) of figure 2 on page 12 unless otherwise noted. 15. this part has a voltage regulator internally; t power is the time that the power needs to be supplied above v dd(minimum) initially before a read or write operation is initiated. 16. t chlz , t clz ,t oelz , and t oehz are specified with ac test conditions shown in (b) of figure 2 on page 12 . transition is measured 200 mv from steady state voltage. 17. at any voltage and temperature, t oehz is less than t oelz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not imply a bus contention condition, but reflect parameters guaranteed ov er worst case user conditions . device is designed to achieve high z prior to low z under the same system conditions. 18. this parameter is sampled and not 100% tested.
cy7c1345g document number: 38-05517 rev. *l page 14 of 24 timing diagrams figure 3. read cycle timing [19] t cyc t cl clk t adh t ads address t ch t ah t as a1 t ceh t ces data out (q) high-z t clz t doh t cdv t oehz t cdv single read burst read t oev t oelz t chz burst wraps around to its initial state t advh t advs t weh t wes t adh t ads q(a2) q(a2 + 1) q(a2 + 2) q(a1) q(a2) q(a2 + 1) q(a2 + 2) q(a2 + 3) a2 adv suspends burst deselect cycle dont care undefined adsp adsc g w, bwe,bw [a:b] ce adv oe note 19. on this diagram, when ce is low: ce 1 is low, ce 2 is high and ce 3 is low. when ce is high: ce 1 is high or ce 2 is low or ce 3 is high.
cy7c1345g document number: 38-05517 rev. *l page 15 of 24 figure 4. write cycle timing [20, 21] timing diagrams (continued) t cyc t cl clk t adh t ads address t ch t ah t as a1 t ceh t ces high-z burst read burst write d(a2) d(a2 + 1) d(a2 + 1) d(a1) d(a3) d(a3 + 1) d(a3 + 2) d(a2 + 3) a2 a3 extended burst write d(a2 + 2) single write t adh t ads t adh t ads t oehz t advh t advs t weh t wes t dh t ds t weh t wes byte write signals are ignored for first cycle when adsp initiates burst adsc extends burst adv suspends burst dont care undefined adsp adsc bwe, bw [a:b] gw ce adv oe data in (d) d ata out (q) notes 20. on this diagram, when ce is low: ce 1 is low, ce 2 is high and ce 3 is low. when ce is high: ce 1 is high or ce 2 is low or ce 3 is high. 21. full width write can be initiated by either gw low; or by gw high, bwe low and bw x low.
cy7c1345g document number: 38-05517 rev. *l page 16 of 24 figure 5. read/write timing [22, 23, 24] timing diagrams (continued) t cyc t cl clk t adh t ads address t ch t ah t as a2 t ceh t ces single write d(a3) a3 a4 burst read back-to-back reads high-z q(a2) q(a4) q(a4+1) q(a4+2) q(a4+3) t weh t wes t oehz t dh t ds t cdv t oelz a1 a5 a6 d(a5) d(a6) q(a1) back-to-back writes dont care undefined adsp adsc bwe, bw [a:b] ce adv oe data in (d) data out (q) notes 22. full width write can be initiated by either gw low; or by gw high, bwe low and bw x low. 23. the data bus (q) remains in high z following a write cycle, unless a new read access is initiated by adsp or adsc . 24. gw is high.
cy7c1345g document number: 38-05517 rev. *l page 17 of 24 figure 6. zz mode timing [25, 26] timing diagrams (continued) t zz i supply clk zz t zzrec a ll inputs (except zz) dont care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only notes 25. device must be deselected when entering zz mode. see "truth table" on page 8 for all possible signal conditions to deselect the device. 26. dqs are in high z when exiting zz sleep mode.
cy7c1345g document number: 38-05517 rev. *l page 18 of 24 ordering information the table below contains only the parts that are currently availa ble. if you don?t see what you are looking for, please contact your local sales representative. for more informa tion, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypre ss.com/products cypress maintains a worldwide network of offices, solution cent ers, manufacturer?s representativ es and distributors. to find th e office closest to you, visit us at http://www.cypress.com /go/datasheet/offices ordering code definitions speed (mhz) ordering code package diagram part and package type operating range 100 CY7C1345G-100AXC 51-85050 100-pin tqfp (14 20 1.4 mm) pb-free commercial cy7c1345g-100axi 51-85050 100-pin tqfp (14 20 1.4 mm) pb-free lndustrial temperature range: x = c or i c = commercial; i = industrial pb-free package type: a = 100-pin tqfp speed grade: 100 mhz process technology: g ?? 90 nm part identifier: 1345 = ft, 128 kb 36 (4 mb) technology code: c = cmos marketing code: 7 = sram company id: cy = cypress x c 1345 g - 100 a cy 7 x
cy7c1345g document number: 38-05517 rev. *l page 19 of 24 package diagrams figure 7. 100-pin tqfp (14 20 1.4 mm) a100ra package outline, 51-85050 51-85050 *d
cy7c1345g document number: 38-05517 rev. *l page 20 of 24 acronyms document conventions units of measure acronym description cmos complementary metal oxide semiconductor ce chip enable cen clock enable gw global write i/o input/output oe output enable sram static random access memory tqfp thin quad flat pack we write enable symbol unit of measure c degree celsius mhz megahertz a microampere ma milliampere mm millimeter ms millisecond mhz megahertz ns nanosecond pf picofarad vvolt wwatt
cy7c1345g document number: 38-05517 rev. *l page 21 of 24 errata this section describes the ram9 sync/nobl zz pin issues. detail s include trigger conditions, the devices affected, proposed wor k- around and silicon revision applicability. please contact your local cypress sales representative if you have further questions . part numbers affected product status all of the devices in the ram9 4mb sync/nobl family are qualified and available in production quantities. ram9 sync/nobl zz pin issues errata summary the following table defines the errata applicable to available ram9 4mb sync/nobl family devices. 1. zz pin issue problem definition the problem occurs only when the device is operated in the no rmal mode with zz pin left floating. the zz pin on the sram device does not have an internal pull-do wn resistor. switching noise in the system may cause the sram to recognize a high on the zz input, which may cause the sram to enter sleep mode. this could result in incorrect or undesirable operation of the sram. trigger conditions device operated with zz pin left floating. scope of impact when the zz pin is left floating, the device delivers incorrect data. workaround tie the zz pin externally to ground. fix status fix was done for the 72mb ram9 synchronous srams and 72m ram9 nobl srams devices. fixed devices have a new revision. the following table lists the devices affected and the new revision after the fix. density & revision package type operating range 4mb-ram9 synchronous srams: cy7c134*g all packages commercial/ industrial item issues description device fix status 1. zz pin when asserted high, the zz pin places device in a ?sleep? condition with data integrity preserved.the zz pin currently does not have an internal pull-down resistor and hence cannot be left floating externally by the user during normal mode of operation. 4m-ram9 (90nm) for the 4m ram9 (90 nm) devices, there is no plan to fix this issue.
cy7c1345g document number: 38-05517 rev. *l page 22 of 24 document history page document title: cy7c1345g, 4-mbit (128 k 36) flow-through sync sram document number: 38-05517 rev. ecn orig. of change submission date description of change ** 224365 rkf see ecn new data sheet. *a 278513 vbl see ecn updated features (removed 66 mhz frequency related information). updated selection guide (removed 66 mhz frequency related information). updated electrical characteristics (removed 66 mhz frequency related information). updated switching characteristics (removed 66 mhz frequency related information). updated ordering information (updated part numbers (added pb-free bga package), changed tqfp package to pb -free tqfp package, added comment on the bg pb-free package availability below the table). *b 333626 syt see ecn updated features (removed 117 mhz frequency related information). updated selection guide (removed 117 mhz frequency related information). updated pin configurations (updated address expansion balls in the pinouts for 100-pin tqfp and 119-ball bga packages as per jedec standards). updated pin definitions . updated functional overview (updated zz mode electrical characteristics (replaced ?snooze? with ?sleep?)). updated truth table (replaced ?snooze? with ?sleep?). updated electrical characteristics (updated test conditions for v ol and v oh parameters, removed 117 mhz frequency related information). updated switching characteristics (removed 117 mhz frequency related information). updated thermal resistance (replaced tbds for ? ja and ? jc to their respective values). updated ordering information (by shading and unshading mpns as per availability, removed comment on the availability of bg pb-free package). *c 418633 rxu see ecn changed status from preliminary to final. changed address of cypress semicondu ctor corporation from ?3901 north first street? to ?198 champion court?. updated electrical characteristics (changed ?input load current except zz and mode? to ?input leakage current except zz and mode?, updated note 11 (changed test condition from v ih < v dd to v ih ?? v dd )). updated ordering information (updated part numbers, replaced package name column with package diagram in the ordering information table). replaced package diagrams . *d 480124 vkn see ecn updated maximum ratings (added the maximum rating for supply voltage on v ddq relative to gnd). updated ordering information (updated part numbers). *e 1274724 vkn see ecn updated timing diagrams (updated figure 4 ). *f 2756998 vkn 08/28/09 included neutron soft error immunity . modified ordering information (by including parts that are available, and modified the disclaimer for the ordering information). *g 3034798 njy 09/21/2010 added ordering code definitions . updated package diagrams . added acronyms and units of measure . minor edits and updated in new template. *h 3353361 prit 08/24/2011 updated package diagrams .
cy7c1345g document number: 38-05517 rev. *l page 23 of 24 *i 3587066 njy / prit 05/10/2012 updated features (removed 133 mhz frequency related information, removed 119-ball bga package related information). updated functional description (removed ?for best practice recommendations, refer to the cypress application note sram system design guidelines ?). updated selection guide (removed 133 mhz frequency related information). updated pin configurations (removed 119-ball bga package related information). updated functional overview (removed 133 mhz frequency related information). updated electrical characteristics (removed 133 mhz frequency related information). updated capacitance (removed 119-ball bga package related information). updated thermal resistance (removed 119-ball bga package related information). updated switching characteristics (removed 133 mhz frequency related information). updated package diagrams (removed 119-ball bga package related information). *j 3753130 prit 09/24/2012 no technical updates. completing sunset review. *k 3980577 prit 04/24/2013 added errata . *l 4039228 prit 06/25/2013 a dded errata footnotes. updated in new template. document history page (continued) document title: cy7c1345g, 4-mbit (128 k 36) flow-through sync sram document number: 38-05517 rev. ecn orig. of change submission date description of change
document number: 38-05517 rev. *l revised june 25, 2013 page 24 of 24 all products and company names mentioned in this document may be the trademarks of their respective holders. cy7c1345g ? cypress semiconductor corporation, 2004-2013. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc ? solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 4 | psoc 5lp cypress developer community community | forums | blogs | video | training technical support cypress.com/go/support

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